for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ow noise - sm t 7 7 - 1 gaas hemt mmic low noise amplifier, 2 - 12 ghz v01.0709 general description features functional diagram noise f igure: 1.8 db gain: 15 db o utput ip 3: +25 dbm p 1db o utput p ower: +13 dbm 50 o hm m atched i nput/ o utput s upply voltage: +4v @ 45 ma 24 l ead ceramic 4x4mm sm t p ackage: 16mm2 electrical specifcations , t a = +25 c, vdd= +4v, idd = 45 ma* typical applications this h m c772 l c4 is ideal for: ? w ideband communication s ystems ? s urveillance s ystems ? p oint-to- p oint r adios ? p oint-to- m ulti- p oint r adios ? m ilitary & s pace ? test i nstrumentation the h m c772 l c4 is a gaas mmi c h em t l ow noise w ideband amplifer which operates between 2 and 12 ghz. the amplifer provides 15 db of gain, 1.8 db noise fgure up to 12 ghz and output ip 3 of +25 dbm, while requiring only 45 ma from a +4v supply voltage. the p sat output power of up to +15 dbm enables the l na to function as a lo driver for many of h i ttites balanced, i /q or image reject mixers. the h m c772 l c4 also features i / o s that are dc blocked and internally matched to 50 o hms, making it ideal for sm t based high capacity microwave radio applications. the h m c772 l c4 is housed in a r oh s compliant 4x4 mm q f n leadless ceramic package. hmc772lc4 p arameter m in. typ. m ax. units f requency r ange 2 - 12 ghz gain 14 15 db gain variation over temperature 0.01 db / c noise f igure 1.8 2.5 db i nput r eturn l oss 15 db o utput r eturn l oss 15 db o utput p ower for 1 db compression 13 dbm o utput third o rder i ntercept ( ip 3) 25 dbm s upply current ( i dd) (vdd = 4v, vgg = -0.2v typ.)* 45 ma * adjust vgg between -1 to 0.3v to achieve i dd = 45ma typical.
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ow noise - sm t 7 7 - 2 hmc772lc4 v01.0709 gaas hemt mmic low noise amplifier, 2 - 12 ghz input return loss vs. temperature noise figure vs. temperature output psat vs. temperature gain vs. temperature output return loss vs. temperature output p1db vs. temperature 10 12 14 16 18 20 1 3 5 7 9 11 13 15 +25 c +85 c - 40 c gain (db) frequency (ghz) -30 -25 -20 -15 -10 -5 0 1 3 5 7 9 11 13 15 +25 c +85 c - 40 c return loss (db) frequency (ghz) 6 8 10 12 14 16 18 1 3 5 7 9 11 13 15 +25 c +85 c - 40 c p1db (dbm) frequency (ghz) 0 1 2 3 4 5 6 1 3 5 7 9 11 13 15 +25 c +85 c -40 c noise figure (db) frequency (ghz) -30 -25 -20 -15 -10 -5 0 1 3 5 7 9 11 13 15 +25 c +85 c - 40 c return loss (db) frequency (ghz) 6 8 10 12 14 16 18 1 3 5 7 9 11 13 15 +25 c +85 c - 40 c psat (dbm) frequency (ghz)
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ow noise - sm t 7 7 - 3 hmc772lc4 v01.0709 gaas hemt mmic low noise amplifier, 2 - 12 ghz power compression @ 12 ghz gain, noise figure & power vs. supply voltage @ 12 ghz output ip3 vs. temperature reverse isolation vs. temperature 18 20 22 24 26 28 30 1 3 5 7 9 11 13 15 +25 c +85 c - 40 c ip3 (dbm) frequency (ghz) -30 -25 -20 -15 -10 -5 0 1 3 5 7 9 11 13 15 +25 c +85 c - 40 c isolation (db) frequency (ghz) -5 0 5 10 15 20 -20 -15 -10 -5 0 5 pout gain pae pout (dbm), gain (db), pae (%) input power (dbm) 0 3 6 9 12 15 18 21 24 0 1 2 3 4 5 6 7 8 3.5 4 4.5 gain p1db noise figure gain (db), p1db (dbm) noise figure (db) vdd (v)
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ow noise - sm t 7 7 - 4 outline drawing absolute maximum ratings ele ct ros tat ic se n si t i v e de v ic e o b ser v e hand li ng pre caut io n s drain bias voltage +5v drain bias current 60 ma rf i nput p ower 5 dbm gate bias voltage -1 to 0.3 v continuous p diss (t = 85 c) (derate 5.8 m w /c above 85 c) 0.55 w thermal r esistance (channel to ground paddle) 172 c/ w channel temperature 180 c s torage temperature -65 to +150 c o perating temperature -40 to +85 c hmc772lc4 v01.0709 gaas hemt mmic low noise amplifier, 2 - 12 ghz n ot es : 1. p ackag e b o dy m at eri a l : a lu mi na. 2. le ad and g ro und p add le pl at i ng: g ol d fl a s h o v er n i ck el . 3. d ime n sio n s a re i n i nch es ( millime t ers ). 4. le ad sp ac i ng t oler anc e is n o n-cu m u l at i v e . 5. p ackag e w a rp s ha ll n ot e xc ee d 0.05 mm datu m C c C 6. a ll g ro und le ad s and g ro und p add le m u s t b e sol d ere d to p cb rf g ro und.
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ow noise - sm t 7 7 - 5 hmc772lc4 v01.0709 gaas hemt mmic low noise amplifier, 2 - 12 ghz p in number f unction description i nterface s chematic 1, 2, 4 - 7, 12 - 15, 17 - 19, 24 gnd these pins and ground paddle must be connected to rf /dc ground. 3 rfi n this pin is ac coupled and matched to 50 o hms. 8 vgg gate control for amplifer. p lease follow mmi c amplifer biasing p rocedure application note. s ee application circuit for required external components. 9 vdd p ower s upply voltage for the amplifer. s ee application circuit for required external components. 10, 11, 20 - 23 n/c the pins are not connected internally; however, all data shown herein was measured with these pins connected to rf /dc ground externally. 16 rfo ut this pin is ac coupled and matched to 50 o hms. pin descriptions application circuit
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ow noise - sm t 7 7 - 6 hmc772lc4 v01.0709 gaas hemt mmic low noise amplifier, 2 - 12 ghz i tem description j1, j2 p cb m ount 2.92mm k-connector j3 - j5 dc p in c1, c4 100 p f capacitor, 0402 p kg. c2, c5 1000 p f capacitor, 0603 p kg. c3, c6 4.7 f capacitor, tantalum u1 h m c772 l c4 amplifer p cb [2] 126357 e valuation p cb [1] r eference this number when ordering complete evaluation p cb [2] circuit board m aterial: r ogers 4350 or arlon 25 fr list of materials for evaluation pcb 126359 [1] the circuit board used in this application should use rf circuit design techniques. s ignal lines should have 50 o hm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. a sufficient number of via holes should be used to connect the top and bottom ground planes. the evaluation board should be mounted to an appro - priate heat sink. the evaluation circuit board shown is available from hittite upon request. evaluation pcb
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